IXTH6N90
MOSFET N-CH 900V 6A TO247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS IXTH6N90 is a high-voltage N-Channel Power MOSFET designed for demanding applications requiring robust breakdown voltage and efficient switching. This component boasts a maximum drain-source voltage (Vdss) of 900V and a continuous drain current (Id) of 6A at 25°C (Tc). With a low on-resistance (Rds On) of 1.8 Ohm maximum at 500mA and 10V Vgs, it facilitates efficient power transfer. The device features a gate charge (Qg) of 130 nC maximum at 10V and an input capacitance (Ciss) of 2600 pF maximum at 25V, enabling faster switching speeds. The IXTH6N90 offers a maximum power dissipation of 180W (Tc) and is housed in a TO-247-3 package, suitable for through-hole mounting. Its operating temperature range is -55°C to 150°C (TJ). This MOSFET is utilized in power supply units, industrial motor drives, and high-voltage switching applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.8Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 180W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-247 (IXTH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2600 pF @ 25 V |
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