IXTH6N80A
MOSFET N-CH 800V 6A TO247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTH6N80A is an N-Channel Power MOSFET designed for demanding applications. This through-hole component features a drain-source voltage (Vdss) of 800V and a continuous drain current (Id) of 6A at 25°C (Tc). With a maximum on-resistance (Rds On) of 1.4 Ohms at 3A and 10V, it offers efficient switching characteristics. The device is housed in a TO-247 package, facilitating robust thermal management with a maximum power dissipation of 180W (Tc). Key parameters include a gate charge (Qg) of 130 nC (Max) at 10V and input capacitance (Ciss) of 2800 pF (Max) at 25V. The IXTH6N80A is suitable for use in industrial power supplies, motor control, and high-voltage switching applications. It operates within an ambient temperature range of -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 180W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-247 (IXTH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2800 pF @ 25 V |
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