IXTH67N10
MOSFET N-CH 100V 67A TO247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS IXTH67N10, an N-Channel MegaMOS™ power MOSFET, offers a 100V drain-source voltage and a continuous drain current of 67A at 25°C (Tc). This device features a low on-resistance of 25mOhm maximum at 33.5A and 10V gate-source voltage. With a maximum power dissipation of 300W (Tc), it is suitable for high-power switching applications. The IXTH67N10 is housed in a TO-247 package with through-hole mounting. Key electrical parameters include a gate charge of 260 nC maximum at 10V Vgs and an input capacitance of 4500 pF maximum at 25V Vds. The operating temperature range is -55°C to 150°C (TJ). This component is commonly utilized in power supplies, motor control, and industrial applications.
Additional Information
Series: MegaMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 67A (Tc) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 33.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 4mA |
| Supplier Device Package | TO-247 (IXTH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 260 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4500 pF @ 25 V |
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