IXTH64N65X
MOSFET N-CH 650V 64A TO247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTH64N65X is a 650V N-Channel Power MOSFET from the Ultra X series. This component features a continuous drain current of 64A at 25°C (Tc) and a maximum power dissipation of 890W (Tc). Key electrical characteristics include a Vds of 650V, an Rds(on) of 51mOhm maximum at 32A and 10V gate drive, and a gate charge (Qg) of 143 nC maximum at 10V. Input capacitance (Ciss) is 5500 pF maximum at 25V. Designed for through-hole mounting, this device utilizes the TO-247 package. It operates within a temperature range of -55°C to 150°C (TJ) and has a Vgs(th) of 5V maximum at 250µA. This MOSFET is suitable for applications in high-power switching, industrial power supplies, and electric vehicle charging.
Additional Information
Series: Ultra XRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 64A (Tc) |
| Rds On (Max) @ Id, Vgs | 51mOhm @ 32A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 890W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-247 (IXTH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 143 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5500 pF @ 25 V |
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