IXTH60N25
MOSFET N-CH 250V 60A TO247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTH60N25 is a high-performance N-Channel MOSFET designed for demanding power applications. Featuring a drain-source voltage (Vdss) of 250V and a continuous drain current (Id) of 60A at 25°C, this component offers robust power handling with a maximum power dissipation of 400W (Tc). Its low on-resistance of 46mOhm at 15A and 10V gate drive ensures efficient operation. With a gate charge (Qg) of 164 nC at 10V and input capacitance (Ciss) of 4400 pF at 25V, it is suitable for high-speed switching circuits. The TO-247-3 package with through-hole mounting provides reliable thermal management for applications in industrial automation, power supplies, and motor control. The device operates across a temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 46mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 400W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247 (IXTH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 164 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4400 pF @ 25 V |
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