IXTH60N15
MOSFET N-CH 150V 60A TO247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS IXTH60N15 is an N-Channel Power MOSFET designed for high-current applications. This device features a Drain-to-Source Voltage (Vdss) of 150V and a continuous Drain Current (Id) of 60A at 25°C. The on-resistance (Rds On) is specified at a maximum of 33mOhm at 15A and 10V gate drive. With a maximum power dissipation of 275W (Tc), it is suitable for demanding power switching and conversion tasks. Key parameters include a gate charge (Qg) of 110 nC at 10V and input capacitance (Ciss) of 3000 pF at 25V. The component utilizes a TO-247 package for through-hole mounting, ensuring robust thermal performance. This MOSFET is commonly employed in industrial power supplies, motor control, and high-power switching applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 33mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 275W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247 (IXTH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3000 pF @ 25 V |
Request a Quote
Clients Also Buy
IXFK90N20Q
MOSFET N-CH 200V 90A TO264AA
IXFH15N80
MOSFET N-CH 800V 15A TO247AD
IXFH20N60
MOSFET N-CH 600V 20A TO-247AD
