IXTH52N65X
MOSFET N-CH 650V 52A TO247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS IXTH52N65X is a N-Channel Power MOSFET from the Ultra X series. This component features a 650 V breakdown voltage and a continuous drain current of 52 A at 25°C (Tc). With a maximum power dissipation of 660 W (Tc), it is designed for high-power applications. The Rds(On) is specified at a maximum of 68 mOhm at Ideals of 26 A and Vgs of 10 V. Gate charge (Qg) is 113 nC maximum at 10 V, and input capacitance (Ciss) is 4350 pF maximum at 25 V. This device utilizes a through-hole mounting type in a TO-247-3 package. Operating temperature ranges from -55°C to 150°C (TJ). This MOSFET is suitable for use in industries such as industrial power supplies, electric vehicle charging, and renewable energy systems.
Additional Information
Series: Ultra XRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 52A (Tc) |
| Rds On (Max) @ Id, Vgs | 68mOhm @ 26A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 660W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-247 (IXTH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 113 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4350 pF @ 25 V |
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