IXTH50N30
MOSFET N-CH 300V 50A TO247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS IXTH50N30 is a high-performance N-Channel Power MOSFET designed for demanding applications. This component features a 300V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 50A at 25°C (Tc). With a maximum power dissipation of 400W (Tc), it is suitable for high-power switching. The Rds(on) is specified at a maximum of 65mOhm at 25A and 10V Vgs. Key characteristics include an input capacitance (Ciss) of 4400pF at 25V and a gate charge (Qg) of 165 nC at 10V. The device utilizes a TO-247-3 package for through-hole mounting. This MOSFET is commonly employed in industrial power supplies, motor control, and power factor correction circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 400W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247 (IXTH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 300 V |
| Gate Charge (Qg) (Max) @ Vgs | 165 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4400 pF @ 25 V |
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