IXTH50N25T
MOSFET N-CH 250V 50A TO247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTH50N25T is a high-performance N-Channel Power MOSFET designed for demanding applications. This component features a 250V (Vdss) drain-source voltage rating and a continuous drain current (Id) of 50A at 25°C (Tc). With a maximum on-resistance (Rds On) of 60mOhm at 25A and 10V (Vgs), it offers excellent conduction efficiency. The device boasts a 400W (Tc) maximum power dissipation and a low gate charge (Qg) of 78 nC at 10V, enabling fast switching speeds. Input capacitance (Ciss) is rated at 4000 pF at 25V. The IXTH50N25T utilizes Trench technology for enhanced performance and is housed in a TO-247-3 package for through-hole mounting. It operates across a wide temperature range of -55°C to 150°C (TJ) and supports a maximum gate-source voltage (Vgs) of ±30V. This MOSFET is suitable for use in power supply, motor control, and industrial automation sectors.
Additional Information
Series: TrenchRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 400W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | TO-247 (IXTH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 78 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4000 pF @ 25 V |
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