IXTH50N20
MOSFET N-CH 200V 50A TO247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS IXTH50N20 is a high-performance N-channel Power MOSFET designed for demanding applications. This component features a 200 V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 50 A at 25°C (Tc). With a maximum power dissipation of 300 W (Tc), it is suitable for high-power switching and linear applications. The IXTH50N20 boasts a low on-resistance (Rds On) of 45 mOhm at 25 A and 10 V gate drive, with a gate charge (Qg) of 220 nC at 10 V. Its TO-247 package with through-hole mounting facilitates robust thermal management. This device is commonly utilized in industrial power supplies, motor control, and high-power conversion systems. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: MegaMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247 (IXTH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 220 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4600 pF @ 25 V |
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