IXTH48N20
MOSFET N-CH 200V 48A TO247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTH48N20 is an N-Channel Power MOSFET designed for high-performance applications. This device features a Drain-to-Source Voltage (Vdss) of 200V and a continuous Drain Current (Id) of 48A at 25°C. With a maximum power dissipation of 275W (Tc) and a low on-resistance of 50mOhm at 15A and 10V Vgs, it offers efficient switching capabilities. The MOSFET is housed in a TO-247 package, suitable for through-hole mounting. Key parameters include a maximum gate charge (Qg) of 110 nC at 10V and an input capacitance (Ciss) of 3000 pF at 25V. Typical applications for this component span industrial power supplies, motor control, and high-voltage switching circuits. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 48A (Tc) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 275W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247 (IXTH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3000 pF @ 25 V |
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