IXTH460P2
MOSFET N-CH 500V 24A TO247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTH460P2 is a high-performance N-Channel Power MOSFET from the PolarP2™ series. This component features a Drain-Source Voltage (Vdss) of 500 V and a continuous Drain Current (Id) of 24 A at 25°C (Tc), with a maximum power dissipation of 480 W (Tc). The device offers a low on-resistance of 270 mOhm maximum at 12 A and 10 V gate drive. Key parameters include input capacitance (Ciss) of 2890 pF at 25 V and gate charge (Qg) of 48 nC at 10 V. The IXTH460P2 is housed in a TO-247 package and is suitable for through-hole mounting. This MOSFET is utilized in applications requiring high voltage and current handling, such as power supplies and industrial motor control. Operating temperature range is from -55°C to 150°C (TJ).
Additional Information
Series: PolarP2™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 480W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-247 (IXTH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2890 pF @ 25 V |
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