IXTH420N04T2
MOSFET N-CH 40V 420A TO247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTH420N04T2 is an N-Channel Power MOSFET from the TrenchT2™ series, featuring a 40V drain-source voltage (Vdss). This component offers a continuous drain current (Id) of 420A at 25°C and a maximum power dissipation of 935W at the same temperature. Key electrical parameters include a low on-resistance (Rds On) of 2mOhm at 100A and 10V, and a gate charge (Qg) of 315 nC at 10V. Input capacitance (Ciss) is specified at 19700 pF at 25V. The device utilizes a TO-247 package for through-hole mounting and operates within a temperature range of -55°C to 175°C. This MOSFET is suitable for high-power switching applications across various industrial sectors.
Additional Information
Series: TrenchT2™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 420A (Tc) |
| Rds On (Max) @ Id, Vgs | 2mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 935W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Supplier Device Package | TO-247 (IXTH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 315 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 19700 pF @ 25 V |
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