IXTH41N25
MOSFET N-CH 250V 41A TO247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTH41N25 is a high-performance N-Channel Power MOSFET designed for demanding applications. This component offers a 250V drain-source voltage (Vdss) and a continuous drain current (Id) of 41A at 25°C (Tc), with a maximum power dissipation of 300W (Tc). It features an Rds On of 72mOhm maximum at 15A and 10V gate-source voltage. The IXTH41N25 utilizes advanced MOSFET technology and is housed in a TO-247-3 package for efficient heat dissipation. Key electrical parameters include a gate charge (Qg) of 110 nC at 10V and input capacitance (Ciss) of 3200 pF. Operating temperature ranges from -55°C to 150°C (TJ). This device is suitable for use in power supply, motor control, and industrial automation applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 41A (Tc) |
| Rds On (Max) @ Id, Vgs | 72mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247 (IXTH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3200 pF @ 25 V |
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