IXTH40N30
MOSFET N-CH 300V 40A TO247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTH40N30 is an N-Channel Power MOSFET from the MegaMOS™ series, designed for high-performance applications. This component features a 300V drain-source voltage (Vdss) and a continuous drain current (Id) of 40A at 25°C (Tc). With a maximum power dissipation of 300W (Tc) and a low on-resistance of 85mOhm at 500mA and 10V, it ensures efficient operation. Key parameters include a gate charge (Qg) of 220 nC at 10V and input capacitance (Ciss) of 4600 pF at 25V. The device utilizes a TO-247 package for through-hole mounting, offering robust thermal performance. Operating temperature ranges from -55°C to 150°C (TJ). This MOSFET is commonly employed in industrial power supplies, motor control, and high-voltage switching applications.
Additional Information
Series: MegaMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 43 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247 (IXTH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 300 V |
| Gate Charge (Qg) (Max) @ Vgs | 220 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4600 pF @ 25 V |
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