IXTH3N200P3HV
MOSFET N-CH 2000V 3A TO247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTH3N200P3HV is an N-Channel Power MOSFET from the Polar P3™ series, designed for high voltage applications. This component features a maximum drain-source voltage (Vdss) of 2000V and a continuous drain current (Id) of 3A at 25°C. With a maximum on-resistance (Rds On) of 8 Ohms at 1.5A and 10V gate-source voltage, it offers efficient power handling. The MOSFET has a high power dissipation capability of 520W at the case temperature. Key parameters include a gate charge (Qg) of 70 nC at 10V and input capacitance (Ciss) of 1860 pF at 25V. The IXTH3N200P3HV is supplied in a TO-247-3 package for through-hole mounting and operates within a temperature range of -55°C to 150°C. This device is suitable for use in high-voltage power conversion and industrial power systems.
Additional Information
Series: Polar P3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Rds On (Max) @ Id, Vgs | 8Ohm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 520W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-247 (IXTH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 2000 V |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1860 pF @ 25 V |
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