IXTH36P10
MOSFET P-CH 100V 36A TO247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS IXTH36P10 is a P-Channel Power MOSFET designed for high-current applications. This through-hole component, packaged in a TO-247 (IXTH) case, offers a continuous drain current of 36A at 25°C (Tc) and a drain-to-source voltage (Vdss) of 100V. The device features a maximum ON-resistance (Rds On) of 75mOhm at 18A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 95 nC at 10V and input capacitance (Ciss) of 2800 pF at 25V. The IXTH36P10 is rated for a maximum power dissipation of 180W (Tc) and operates within a temperature range of -55°C to 150°C (TJ). This MOSFET is suitable for use in power conversion and control circuits within industrial and renewable energy sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 180W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-247 (IXTH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 95 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2800 pF @ 25 V |
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