IXTH30N50
MOSFET N-CH 500V 30A TO247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTH30N50 is an N-Channel Power MOSFET from the MegaMOS™ series, designed for high-voltage applications. This component features a Drain-to-Source Voltage (Vdss) of 500 V and a continuous Drain Current (Id) capability of 30 A at 25°C (Tc). With a maximum power dissipation of 360 W (Tc) and a low on-resistance of 170 mOhm at 500 mA and 10 V Vgs, it is suitable for demanding power switching applications. Key parameters include a gate charge (Qg) of 227 nC at 10 V and input capacitance (Ciss) of 5680 pF at 25 V. The device utilizes through-hole mounting in a TO-247-3 package, operating within a temperature range of -55°C to 150°C (TJ). This MOSFET technology is frequently employed in industrial power supplies, motor control, and high-voltage converters.
Additional Information
Series: MegaMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247 (IXTH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 227 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5680 pF @ 25 V |
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