IXTH30N25
MOSFET N-CH 250V 30A TO247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTH30N25 is an N-Channel Power MOSFET designed for high-performance applications. This component features a maximum drain-source voltage (Vdss) of 250V and a continuous drain current (Id) of 30A at 25°C, with a maximum power dissipation of 200W (Tc). The Rds(On) is specified at a maximum of 75mOhm at 15A and 10V gate drive. Key parameters include a gate charge (Qg) of 136 nC at 10V and an input capacitance (Ciss) of 3950 pF at 25V. The device utilizes TO-247 packaging and is suitable for through-hole mounting. It operates within a temperature range of -55°C to 150°C (TJ). This MOSFET is commonly employed in power switching, motor control, and industrial power supply applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247 (IXTH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 136 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3950 pF @ 25 V |
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