IXTH280N055T
MOSFET N-CH 55V 280A TO247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTH280N055T is a TrenchMV™ series N-Channel MOSFET designed for high-power applications. This through-hole component features a 55V drain-source voltage (Vdss) and a continuous drain current (Id) of 280A at 25°C (Tc). With a maximum power dissipation of 550W (Tc), it offers a low on-resistance (Rds On) of 3.2mOhm at 50A and 10V gate-source voltage (Vgs). Key parameters include input capacitance (Ciss) of 9700pF at 25V and gate charge (Qg) of 200 nC at 10V. The operating temperature range is -55°C to 175°C (TJ). This MOSFET is suitable for demanding applications in the industrial and power supply sectors. It is supplied in a TO-247-3 package.
Additional Information
Series: TrenchMV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 280A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.2mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 550W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247 (IXTH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 200 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9700 pF @ 25 V |
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