IXTH270N04T4
MOSFET N-CH 40V 270A TO247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS N-Channel Power MOSFET, part number IXTH270N04T4, offers a 40V drain-source breakdown voltage and a continuous drain current capability of 270A at 25°C (Tc). This Trench series device features a low on-resistance of 2.4mOhm maximum at 50A and 10V Vgs, contributing to efficient power handling with a maximum power dissipation of 375W (Tc). The IXTH270N04T4 is housed in a TO-247-3 package suitable for through-hole mounting. Key parameters include a gate charge of 182 nC (max) at 10V and input capacitance of 9140 pF (max) at 25V. This component is well-suited for demanding applications in industrial power supplies and electric vehicle powertrains.
Additional Information
Series: TrenchRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 270A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.4mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 375W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247 (IXTH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 182 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9140 pF @ 25 V |
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