IXTH250N075T
MOSFET N-CH 75V 250A TO247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS TrenchMV™ N-Channel Power MOSFET, part number IXTH250N075T, offers a 75V drain-source voltage with a continuous drain current capability of 250A at 25°C (Tc). This through-hole TO-247 package component features a low on-resistance of 4mOhm maximum at 50A and 10V gate-source voltage. Key parameters include a maximum gate charge of 200 nC at 10V and an input capacitance of 9900 pF at 25V. With a maximum power dissipation of 550W (Tc) and an operating temperature range of -55°C to 175°C, this MOSFET is suitable for high-power applications in industries such as electric vehicles, industrial power supplies, and renewable energy systems.
Additional Information
Series: TrenchMV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 250A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 550W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247 (IXTH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 200 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9900 pF @ 25 V |
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