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IXTH240N055T

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IXTH240N055T

MOSFET N-CH 55V 240A TO247

Manufacturer: IXYS

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The IXYS IXTH240N055T is an N-Channel Power MOSFET from the TrenchMV™ series, offering a 55V drain-to-source voltage (Vdss). This component features a low on-resistance (Rds On) of 3.6mOhm at 25A and 10V Vgs, with a continuous drain current (Id) capability of 240A at 25°C (Tc). The device supports a gate drive voltage of 10V for optimal performance and has a maximum gate-source voltage (Vgs) of ±20V. Key capacitance values include input capacitance (Ciss) of 7600pF at 25V and gate charge (Qg) of 170 nC at 10V. With a maximum power dissipation of 480W (Tc), this device is suitable for high-power switching applications. The IXTH240N055T is packaged in a TO-247-3 through-hole configuration, designed for reliable thermal management. It operates across a temperature range of -55°C to 175°C (TJ). This MOSFET finds application in power supplies, motor control, and electric vehicle systems.

Additional Information

Series: TrenchMV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C240A (Tc)
Rds On (Max) @ Id, Vgs3.6mOhm @ 25A, 10V
FET Feature-
Power Dissipation (Max)480W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)55 V
Gate Charge (Qg) (Max) @ Vgs170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7600 pF @ 25 V

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