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IXTH230N085T

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IXTH230N085T

MOSFET N-CH 85V 230A TO247

Manufacturer: IXYS

Categories: Single FETs, MOSFETs

Quality Control: Learn More

IXYS IXTH230N085T TrenchMV™ N-Channel Power MOSFET. This component features an 85V drain-source breakdown voltage and a continuous drain current rating of 230A at 25°C (Tc). With a maximum on-resistance (Rds(on)) of 4.4mOhm at 50A and 10V Vgs, it offers low conduction losses. The device supports a 10V gate drive and has a typical gate charge of 187nC at 10V. Input capacitance (Ciss) is 9900pF at 25V. Power dissipation is rated at 550W (Tc). The IXTH230N085T is housed in a TO-247-3 package and is suitable for through-hole mounting. Operating temperature range is -55°C to 175°C. This technology is commonly employed in high-power switching applications across industries such as electric vehicle charging, industrial power supplies, and renewable energy systems.

Additional Information

Series: TrenchMV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C230A (Tc)
Rds On (Max) @ Id, Vgs4.4mOhm @ 50A, 10V
FET Feature-
Power Dissipation (Max)550W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)85 V
Gate Charge (Qg) (Max) @ Vgs187 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds9900 pF @ 25 V

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