IXTH230N085T
MOSFET N-CH 85V 230A TO247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS IXTH230N085T TrenchMV™ N-Channel Power MOSFET. This component features an 85V drain-source breakdown voltage and a continuous drain current rating of 230A at 25°C (Tc). With a maximum on-resistance (Rds(on)) of 4.4mOhm at 50A and 10V Vgs, it offers low conduction losses. The device supports a 10V gate drive and has a typical gate charge of 187nC at 10V. Input capacitance (Ciss) is 9900pF at 25V. Power dissipation is rated at 550W (Tc). The IXTH230N085T is housed in a TO-247-3 package and is suitable for through-hole mounting. Operating temperature range is -55°C to 175°C. This technology is commonly employed in high-power switching applications across industries such as electric vehicle charging, industrial power supplies, and renewable energy systems.
Additional Information
Series: TrenchMV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 230A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.4mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 550W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247 (IXTH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 85 V |
| Gate Charge (Qg) (Max) @ Vgs | 187 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9900 pF @ 25 V |
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