IXTH22N50P
MOSFET N-CH 500V 22A TO247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS IXTH22N50P is a high-performance N-Channel Power MOSFET from the Polar series, designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 500V and a continuous Drain Current (Id) of 22A at 25°C (Tc). With a maximum power dissipation of 350W (Tc), it is suitable for high-power conversion tasks. The Rds On is specified at a maximum of 270mOhm at 11A and 10V gate drive. Key parameters include a gate charge (Qg) of 50 nC @ 10V and input capacitance (Ciss) of 2630 pF @ 25V. The device is housed in a TO-247-3 package, facilitating through-hole mounting. Operating temperature range is -55°C to 150°C (TJ). This MOSFET is commonly utilized in power supply units, industrial motor control, and renewable energy systems.
Additional Information
Series: PolarRoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 350W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | TO-247 (IXTH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2630 pF @ 25 V |
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