IXTH220N055T
MOSFET N-CH 55V 220A TO247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS IXTH220N055T is an N-Channel Power MOSFET designed for high-current applications. This TrenchMV™ series device features a drain-to-source voltage (Vdss) of 55V and a continuous drain current (Id) of 220A at 25°C (Tc). The extremely low on-resistance (Rds On) of 4mOhm at 25A and 10V gate drive minimizes conduction losses. With a maximum power dissipation of 430W (Tc), the TO-247 (IXTH) package facilitates efficient thermal management. Key parameters include a gate charge (Qg) of 158nC at 10V and an input capacitance (Ciss) of 7200pF at 25V. This component is suitable for demanding applications in power conversion, industrial motor control, and electric vehicle powertrains. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: TrenchMV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 220A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 430W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247 (IXTH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 158 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7200 pF @ 25 V |
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