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IXTH21N50Q

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IXTH21N50Q

MOSFET N-CH 500V 21A TO247AD

Manufacturer: IXYS

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The IXYS HiPerFET™ IXTH21N50Q is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a drain-to-source voltage (Vdss) of 500V and a continuous drain current (Id) of 21A at 25°C (Tc). Its low on-resistance (Rds On) of 250mOhm at 10.5A and 10V drive voltage, coupled with a maximum power dissipation of 300W (Tc), makes it suitable for demanding power conversion tasks. The device offers a gate charge (Qg) of 190 nC at 10V and an input capacitance (Ciss) of 4200 pF at 25V. Packaged in a TO-247AD through-hole configuration, the IXTH21N50Q operates across a temperature range of -55°C to 150°C (TJ). It finds application in power supplies, industrial motor control, and renewable energy systems.

Additional Information

Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C21A (Tc)
Rds On (Max) @ Id, Vgs250mOhm @ 10.5A, 10V
FET Feature-
Power Dissipation (Max)300W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-247AD
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)500 V
Gate Charge (Qg) (Max) @ Vgs190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4200 pF @ 25 V

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