IXTH20N65X
MOSFET N-CH 650V 20A TO247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTH20N65X is an N-Channel Power MOSFET from the Ultra X series, designed for high-efficiency power conversion applications. This component features a 650V drain-to-source voltage (Vdss) rating and a continuous drain current of 20A at 25°C (Tc), with a maximum power dissipation of 320W (Tc). The device exhibits a low on-resistance (Rds On) of 210mOhm at 10A and 10V, and a gate charge (Qg) of 35 nC at 10V, facilitating efficient switching. It utilizes a TO-247 package for robust thermal management and is suitable for through-hole mounting. Key electrical characteristics include an input capacitance (Ciss) of 1390 pF at 25V and a gate-source voltage (Vgs) tolerance of ±30V. The IXTH20N65X is commonly employed in power supplies, motor control, and industrial automation.
Additional Information
Series: Ultra XRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 210mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 320W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | TO-247 (IXTH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1390 pF @ 25 V |
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