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IXTH20N50D

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IXTH20N50D

MOSFET N-CH 500V 20A TO247

Manufacturer: IXYS

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The IXYS IXTH20N50D is a depletion-mode N-channel Power MOSFET designed for high-voltage applications. This component features a 500V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 20A at 25°C, with a maximum power dissipation of 400W (Tc). The device offers a low on-resistance (Rds On) of 330mOhm at 10A and 10V gate-source voltage. Key electrical characteristics include a gate charge (Qg) of 125 nC and input capacitance (Ciss) of 2500 pF at specified voltages, supporting a gate-source voltage range of ±30V. Packaged in a TO-247-3 through-hole configuration, the IXTH20N50D is suitable for use in power supplies, industrial motor control, and high-voltage switching applications. It operates within an extended temperature range of -55°C to 150°C.

Additional Information

Series: DepletionRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Rds On (Max) @ Id, Vgs330mOhm @ 10A, 10V
FET FeatureDepletion Mode
Power Dissipation (Max)400W (Tc)
Vgs(th) (Max) @ Id-
Supplier Device PackageTO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)500 V
Gate Charge (Qg) (Max) @ Vgs125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2500 pF @ 25 V

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