IXTH20N50D
MOSFET N-CH 500V 20A TO247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTH20N50D is a depletion-mode N-channel Power MOSFET designed for high-voltage applications. This component features a 500V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 20A at 25°C, with a maximum power dissipation of 400W (Tc). The device offers a low on-resistance (Rds On) of 330mOhm at 10A and 10V gate-source voltage. Key electrical characteristics include a gate charge (Qg) of 125 nC and input capacitance (Ciss) of 2500 pF at specified voltages, supporting a gate-source voltage range of ±30V. Packaged in a TO-247-3 through-hole configuration, the IXTH20N50D is suitable for use in power supplies, industrial motor control, and high-voltage switching applications. It operates within an extended temperature range of -55°C to 150°C.
Additional Information
Series: DepletionRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 330mOhm @ 10A, 10V |
| FET Feature | Depletion Mode |
| Power Dissipation (Max) | 400W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-247 (IXTH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 125 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2500 pF @ 25 V |
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