IXTH200N085T
MOSFET N-CH 85V 200A TO247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
IXYS IXTH200N085T is an N-Channel Power MOSFET from the TrenchMV™ series, housed in a TO-247 package. This component features a Drain-to-Source Voltage (Vdss) of 85V and a continuous drain current (Id) of 200A at 25°C (Tc). The low on-resistance is specified as a maximum of 5mOhm at 25A and 10V gate drive. Key characteristics include a gate charge (Qg) of 152 nC (max) at 10V and input capacitance (Ciss) of 7600 pF (max) at 25V. With a maximum power dissipation of 480W (Tc), this device is designed for high-power switching applications. It is suitable for use in industries such as industrial power supplies, electric vehicle charging, and solid-state motor control. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: TrenchMV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 200A (Tc) |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 480W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247 (IXTH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 85 V |
| Gate Charge (Qg) (Max) @ Vgs | 152 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7600 pF @ 25 V |
Request a Quote
Clients Also Buy
IXTA152N085T7
MOSFET N-CH 85V 152A TO263-7
IXTA180N085T
MOSFET N-CH 85V 180A TO263
IXTA180N085T7
MOSFET N-CH 85V 180A TO263-7