IXTH200N075T
MOSFET N-CH 75V 200A TO247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
IXYS IXTH200N075T, an N-Channel Power MOSFET, offers a robust 75V drain-source voltage (Vdss) and a continuous drain current (Id) of 200A at 25°C (Tc). This device features a low on-resistance (Rds On) of 5mOhm at 25A and 10V Vgs, with a maximum gate charge (Qg) of 160 nC at 10V. The input capacitance (Ciss) is specified at a maximum of 6800 pF at 25V. Designed for high-power applications, it boasts a maximum power dissipation of 430W (Tc). The TO-247-3 package facilitates through-hole mounting. This component is suitable for demanding applications in the automotive and industrial sectors. Operating temperature range is from -55°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 200A (Tc) |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 430W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247 (IXTH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 160 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6800 pF @ 25 V |
Request a Quote
Clients Also Buy
IXFK90N20Q
MOSFET N-CH 200V 90A TO264AA
IXFH15N80
MOSFET N-CH 800V 15A TO247AD
IXFH20N60
MOSFET N-CH 600V 20A TO-247AD
