IXTH1N100
MOSFET N-CH 1000V 1.5A TO247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS IXTH1N100 is a high-voltage N-channel Power MOSFET designed for demanding applications. This component features a 1000V drain-to-source breakdown voltage (Vdss) and a continuous drain current (Id) rating of 1.5A at 25°C. With a maximum power dissipation of 60W (Tc), it is suitable for use in power supply, motor control, and industrial applications. The device offers a low on-resistance (Rds On) of 11 Ohms maximum at 1A, 10V, and a gate charge (Qg) of 23 nC maximum at 10V. Utilizing a through-hole mounting type in a TO-247-3 package, the IXTH1N100 operates across a temperature range of -55°C to 150°C. Key electrical parameters include an input capacitance (Ciss) of 480 pF maximum at 25V and a gate-source voltage (Vgs) limit of +/-20V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 11Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 25µA |
| Supplier Device Package | TO-247 (IXTH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 480 pF @ 25 V |
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