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IXTH182N055T

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IXTH182N055T

MOSFET N-CH 55V 182A TO247

Manufacturer: IXYS

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The IXYS IXTH182N055T is a high-performance N-Channel MOSFET from the TrenchMV™ series. This component features a drain-source voltage (Vdss) of 55V and a continuous drain current (Id) of 182A at 25°C (Tc). With a low on-resistance (Rds On) of 5mOhm at 25A and 10V, this device offers excellent conduction efficiency. The IXTH182N055T boasts a maximum power dissipation of 360W (Tc) and a junction temperature range of -55°C to 175°C. Key electrical parameters include a gate charge (Qg) of 114 nC at 10V and an input capacitance (Ciss) of 4850 pF at 25V. The component is housed in a TO-247-3 package, suitable for through-hole mounting. This MOSFET is commonly utilized in power conversion, motor control, and high-current switching applications across various industrial sectors.

Additional Information

Series: TrenchMV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C182A (Tc)
Rds On (Max) @ Id, Vgs5mOhm @ 25A, 10V
FET Feature-
Power Dissipation (Max)360W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)55 V
Gate Charge (Qg) (Max) @ Vgs114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4850 pF @ 25 V

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