IXTH182N055T
MOSFET N-CH 55V 182A TO247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTH182N055T is a high-performance N-Channel MOSFET from the TrenchMV™ series. This component features a drain-source voltage (Vdss) of 55V and a continuous drain current (Id) of 182A at 25°C (Tc). With a low on-resistance (Rds On) of 5mOhm at 25A and 10V, this device offers excellent conduction efficiency. The IXTH182N055T boasts a maximum power dissipation of 360W (Tc) and a junction temperature range of -55°C to 175°C. Key electrical parameters include a gate charge (Qg) of 114 nC at 10V and an input capacitance (Ciss) of 4850 pF at 25V. The component is housed in a TO-247-3 package, suitable for through-hole mounting. This MOSFET is commonly utilized in power conversion, motor control, and high-current switching applications across various industrial sectors.
Additional Information
Series: TrenchMV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 182A (Tc) |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247 (IXTH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 114 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4850 pF @ 25 V |
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