IXTH16P20
MOSFET P-CH 200V 16A TO247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS IXTH16P20 is a P-Channel MOSFET with a drain-source voltage (Vdss) of 200 V and a continuous drain current (Id) of 16A at 25°C. This device features a maximum power dissipation of 300W (Tc). The on-resistance (Rds On) is 160mOhm at 500mA and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 95 nC at 10V and input capacitance (Ciss) of 2800 pF at 25V. The IXTH16P20 is housed in a TO-247-3 package suitable for through-hole mounting. This component is designed for applications requiring high voltage and current handling in power management and switching circuits, commonly found in industrial power supplies, automotive systems, and motor control applications. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-247 (IXTH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 95 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2800 pF @ 25 V |
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