IXTH16N10D2
MOSFET N-CH 100V 16A TO247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTH16N10D2 is a depletion-mode, N-channel Power MOSFET designed for high-efficiency power switching applications. This component features a continuous drain current of 16A at 25°C (Tc) and a drain-source voltage (Vdss) of 100V. With a maximum power dissipation of 830W (Tc), it is suitable for demanding thermal environments. The device exhibits a low on-resistance of 64mOhm at 8A and 0V Vgs, facilitated by its depletion mode operation, requiring 0V for maximum Rds On. Key parameters include a Gate Charge (Qg) of 225 nC at 5V and Input Capacitance (Ciss) of 5700 pF at 25V. The IXTH16N10D2 is packaged in a TO-247-3 through-hole package, compatible with standard TO-247 (IXTH) mounting. It operates across a temperature range of -55°C to 175°C (TJ) and has a maximum gate-source voltage of ±20V. This MOSFET is utilized in various industrial sectors, including power supplies and motor control.
Additional Information
Series: DepletionRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 64mOhm @ 8A, 0V |
| FET Feature | Depletion Mode |
| Power Dissipation (Max) | 830W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-247 (IXTH) |
| Drive Voltage (Max Rds On, Min Rds On) | 0V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 225 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5700 pF @ 25 V |
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