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IXTH16N10D2

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IXTH16N10D2

MOSFET N-CH 100V 16A TO247

Manufacturer: IXYS

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The IXYS IXTH16N10D2 is a depletion-mode, N-channel Power MOSFET designed for high-efficiency power switching applications. This component features a continuous drain current of 16A at 25°C (Tc) and a drain-source voltage (Vdss) of 100V. With a maximum power dissipation of 830W (Tc), it is suitable for demanding thermal environments. The device exhibits a low on-resistance of 64mOhm at 8A and 0V Vgs, facilitated by its depletion mode operation, requiring 0V for maximum Rds On. Key parameters include a Gate Charge (Qg) of 225 nC at 5V and Input Capacitance (Ciss) of 5700 pF at 25V. The IXTH16N10D2 is packaged in a TO-247-3 through-hole package, compatible with standard TO-247 (IXTH) mounting. It operates across a temperature range of -55°C to 175°C (TJ) and has a maximum gate-source voltage of ±20V. This MOSFET is utilized in various industrial sectors, including power supplies and motor control.

Additional Information

Series: DepletionRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C16A (Tc)
Rds On (Max) @ Id, Vgs64mOhm @ 8A, 0V
FET FeatureDepletion Mode
Power Dissipation (Max)830W (Tc)
Vgs(th) (Max) @ Id-
Supplier Device PackageTO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On)0V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs225 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds5700 pF @ 25 V

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