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IXTH160N075T

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IXTH160N075T

MOSFET N-CH 75V 160A TO247

Manufacturer: IXYS

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The IXYS IXTH160N075T is a TrenchMV™ series N-Channel Power MOSFET designed for high-performance applications. This through-hole component features a 75 V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 160 A at 25°C (Tc). Its low on-resistance (Rds On) of 6 mOhm at 25 A and 10 V gate-source voltage (Vgs) ensures efficient power handling, with a maximum power dissipation of 360 W (Tc). The device has a gate charge (Qg) of 112 nC at 10 V and input capacitance (Ciss) of 4950 pF at 25 V. Operating across a temperature range of -55°C to 175°C (TJ), this TO-247-3 packaged MOSFET is suitable for demanding power conversion, industrial motor control, and electric vehicle applications.

Additional Information

Series: TrenchMV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C160A (Tc)
Rds On (Max) @ Id, Vgs6mOhm @ 25A, 10V
FET Feature-
Power Dissipation (Max)360W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)75 V
Gate Charge (Qg) (Max) @ Vgs112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4950 pF @ 25 V

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