IXTH160N075T
MOSFET N-CH 75V 160A TO247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS IXTH160N075T is a TrenchMV™ series N-Channel Power MOSFET designed for high-performance applications. This through-hole component features a 75 V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 160 A at 25°C (Tc). Its low on-resistance (Rds On) of 6 mOhm at 25 A and 10 V gate-source voltage (Vgs) ensures efficient power handling, with a maximum power dissipation of 360 W (Tc). The device has a gate charge (Qg) of 112 nC at 10 V and input capacitance (Ciss) of 4950 pF at 25 V. Operating across a temperature range of -55°C to 175°C (TJ), this TO-247-3 packaged MOSFET is suitable for demanding power conversion, industrial motor control, and electric vehicle applications.
Additional Information
Series: TrenchMV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 160A (Tc) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247 (IXTH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 112 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4950 pF @ 25 V |
Request a Quote
Clients Also Buy
IXTA152N085T7
MOSFET N-CH 85V 152A TO263-7
IXTA180N085T
MOSFET N-CH 85V 180A TO263
IXTA180N085T7
MOSFET N-CH 85V 180A TO263-7