IXTH152N085T
MOSFET N-CH 85V 152A TO247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTH152N085T is an N-Channel Power MOSFET from the TrenchMV™ series. This component features a Drain-to-Source Voltage (Vdss) of 85V and a continuous drain current (Id) of 152A at 25°C (Tc), with a maximum power dissipation of 360W (Tc). The low on-resistance (Rds On) is specified at 7mOhm at 25A and 10V. Key parameters include a Gate Charge (Qg) of 114 nC at 10V and an input capacitance (Ciss) of 5500 pF at 25V. It operates with a gate drive voltage of 10V for optimal performance and has a maximum gate-source voltage (Vgs) of ±20V. The threshold voltage (Vgs(th)) is 4V at 250µA. This device is housed in a TO-247-3 package, designed for through-hole mounting, and is rated for an operating temperature range of -55°C to 175°C (TJ). Applications include high-power switching and motor control systems across various industrial sectors.
Additional Information
Series: TrenchMV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 152A (Tc) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247 (IXTH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 85 V |
| Gate Charge (Qg) (Max) @ Vgs | 114 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5500 pF @ 25 V |
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