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IXTH152N085T

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IXTH152N085T

MOSFET N-CH 85V 152A TO247

Manufacturer: IXYS

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The IXYS IXTH152N085T is an N-Channel Power MOSFET from the TrenchMV™ series. This component features a Drain-to-Source Voltage (Vdss) of 85V and a continuous drain current (Id) of 152A at 25°C (Tc), with a maximum power dissipation of 360W (Tc). The low on-resistance (Rds On) is specified at 7mOhm at 25A and 10V. Key parameters include a Gate Charge (Qg) of 114 nC at 10V and an input capacitance (Ciss) of 5500 pF at 25V. It operates with a gate drive voltage of 10V for optimal performance and has a maximum gate-source voltage (Vgs) of ±20V. The threshold voltage (Vgs(th)) is 4V at 250µA. This device is housed in a TO-247-3 package, designed for through-hole mounting, and is rated for an operating temperature range of -55°C to 175°C (TJ). Applications include high-power switching and motor control systems across various industrial sectors.

Additional Information

Series: TrenchMV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C152A (Tc)
Rds On (Max) @ Id, Vgs7mOhm @ 25A, 10V
FET Feature-
Power Dissipation (Max)360W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)85 V
Gate Charge (Qg) (Max) @ Vgs114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5500 pF @ 25 V

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