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IXTH150N17T

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IXTH150N17T

MOSFET N-CH 175V 150A TO247

Manufacturer: IXYS

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The IXYS IXTH150N17T is an N-Channel Power MOSFET from the TrenchHV™ series, featuring a 175V drain-source voltage (Vdss) and a continuous drain current (Id) of 150A at 25°C (Tc). This through-hole component, housed in a TO-247 package, offers a low on-resistance (Rds On) of 12mOhm at 75A and 10V gate-source voltage (Vgs). Key parameters include a gate charge (Qg) of 155 nC at 10V and input capacitance (Ciss) of 9800 pF at 25V. With a maximum power dissipation of 830W at 25°C (Tc) and an operating temperature range of -55°C to 175°C, this MOSFET is suitable for high-power applications in sectors such as industrial power supplies, motor control, and renewable energy systems.

Additional Information

Series: TrenchHV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C150A (Tc)
Rds On (Max) @ Id, Vgs12mOhm @ 75A, 10V
FET Feature-
Power Dissipation (Max)830W (Tc)
Vgs(th) (Max) @ Id5V @ 1mA
Supplier Device PackageTO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)175 V
Gate Charge (Qg) (Max) @ Vgs155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds9800 pF @ 25 V

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