IXTH150N17T
MOSFET N-CH 175V 150A TO247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTH150N17T is an N-Channel Power MOSFET from the TrenchHV™ series, featuring a 175V drain-source voltage (Vdss) and a continuous drain current (Id) of 150A at 25°C (Tc). This through-hole component, housed in a TO-247 package, offers a low on-resistance (Rds On) of 12mOhm at 75A and 10V gate-source voltage (Vgs). Key parameters include a gate charge (Qg) of 155 nC at 10V and input capacitance (Ciss) of 9800 pF at 25V. With a maximum power dissipation of 830W at 25°C (Tc) and an operating temperature range of -55°C to 175°C, this MOSFET is suitable for high-power applications in sectors such as industrial power supplies, motor control, and renewable energy systems.
Additional Information
Series: TrenchHV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 150A (Tc) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 830W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | TO-247 (IXTH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 175 V |
| Gate Charge (Qg) (Max) @ Vgs | 155 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9800 pF @ 25 V |
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