IXTH14N80
MOSFET N-CH 800V 14A TO247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTH14N80 is an N-Channel Power MOSFET from the MegaMOS™ series, featuring an 800V drain-source voltage (Vdss). This through-hole component, packaged in a TO-247-3 (IXTH) housing, offers a continuous drain current (Id) of 14A at 25°C and a maximum power dissipation (Pd) of 300W at the same temperature. Key electrical parameters include a maximum on-resistance (Rds On) of 700mOhm at 500mA and 10V, a gate charge (Qg) of 170 nC at 10V, and an input capacitance (Ciss) of 4500 pF at 25V. The device supports a gate-source voltage (Vgs) range of ±20V, with a threshold voltage (Vgs(th)) of 4.5V at 250µA. This component is suitable for applications in power supplies, motor control, and industrial automation. It operates within a temperature range of -55°C to 150°C.
Additional Information
Series: MegaMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 700mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-247 (IXTH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4500 pF @ 25 V |
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