IXTH14N100
MOSFET N-CH 1000V 14A TO247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS MegaMOS™ IXTH14N100 is a high-voltage N-Channel Power MOSFET designed for demanding applications. This component features a maximum drain-source voltage (Vdss) of 1000V and a continuous drain current (Id) of 14A at 25°C (Tc). With a maximum power dissipation of 360W (Tc), the IXTH14N100 is suitable for high-power switching applications. The device offers a low on-resistance (Rds On) of 820mOhm at 500mA and 10V gate drive. Key parameters include a gate charge (Qg) of 195 nC (max) at 10V and an input capacitance (Ciss) of 5650 pF (max) at 25V. It is housed in a TO-247-3 package, facilitating through-hole mounting. The operating temperature range is from -55°C to 150°C (TJ). This MOSFET is utilized in power supply units, industrial motor control, and renewable energy systems.
Additional Information
Series: MegaMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 820mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-247 (IXTH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 195 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5650 pF @ 25 V |