IXTH13N80
MOSFET N-CH 800V 13A TO247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS MegaMOS™ IXTH13N80 is an N-Channel Power MOSFET designed for high-voltage applications. This component features a maximum drain-source voltage (Vdss) of 800V and a continuous drain current (Id) of 13A at 25°C (Tc). With a maximum power dissipation of 300W (Tc), it is suitable for demanding power conversion and switching applications. The device offers a low on-resistance (Rds On) of 800mOhm at 500mA and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 170 nC at 10V and input capacitance (Ciss) of 4500 pF at 25V. Packaged in a TO-247-3 through-hole format, the IXTH13N80 operates across a temperature range of -55°C to 150°C. This component is commonly utilized in power supplies, industrial motor control, and lighting applications.
Additional Information
Series: MegaMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-247 (IXTH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4500 pF @ 25 V |
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