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IXTH13N110

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IXTH13N110

MOSFET N-CH 1100V 13A TO247

Manufacturer: IXYS

Categories: Single FETs, MOSFETs

Quality Control: Learn More

IXYS IXTH13N110, an N-Channel MegaMOS™ Power MOSFET, offers a 1100V drain-source voltage and 13A continuous drain current at 25°C (Tc). This device boasts a maximum power dissipation of 360W (Tc) and a low on-resistance of 920mOhm at 500mA, 10V. The TO-247 (IXTH) package facilitates efficient heat dissipation. Key parameters include a gate charge (Qg) of 195 nC @ 10V and input capacitance (Ciss) of 5650 pF @ 25V. Operating temperature ranges from -55°C to 150°C (TJ). This high-voltage MOSFET is suitable for demanding applications in power conversion, industrial motor control, and high-voltage power supplies.

Additional Information

Series: MegaMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C13A (Tc)
Rds On (Max) @ Id, Vgs920mOhm @ 500mA, 10V
FET Feature-
Power Dissipation (Max)360W (Tc)
Vgs(th) (Max) @ Id4.5V @ 250µA
Supplier Device PackageTO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)1100 V
Gate Charge (Qg) (Max) @ Vgs195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5650 pF @ 25 V

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