IXTH13N110
MOSFET N-CH 1100V 13A TO247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS IXTH13N110, an N-Channel MegaMOS™ Power MOSFET, offers a 1100V drain-source voltage and 13A continuous drain current at 25°C (Tc). This device boasts a maximum power dissipation of 360W (Tc) and a low on-resistance of 920mOhm at 500mA, 10V. The TO-247 (IXTH) package facilitates efficient heat dissipation. Key parameters include a gate charge (Qg) of 195 nC @ 10V and input capacitance (Ciss) of 5650 pF @ 25V. Operating temperature ranges from -55°C to 150°C (TJ). This high-voltage MOSFET is suitable for demanding applications in power conversion, industrial motor control, and high-voltage power supplies.
Additional Information
Series: MegaMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Rds On (Max) @ Id, Vgs | 920mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-247 (IXTH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 1100 V |
| Gate Charge (Qg) (Max) @ Vgs | 195 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5650 pF @ 25 V |
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