IXTH130N15T
MOSFET N-CH 150V 130A TO247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTH130N15T is an N-Channel Trench MOSFET designed for high-power applications. This component features a Drain-to-Source Voltage (Vdss) of 150V and a continuous Drain Current (Id) rating of 130A at 25°C (Tc). The low on-resistance is specified as a maximum of 12mOhm at 65A and 10V gate drive. Key characteristics include a maximum gate charge (Qg) of 113 nC at 10V and input capacitance (Ciss) of 9800 pF at 25V. With a maximum power dissipation of 750W (Tc), this MOSFET is suitable for demanding applications in power conversion, industrial motor control, and electric vehicle powertrains. The device is housed in a TO-247 package for through-hole mounting and operates across a temperature range of -55°C to 175°C.
Additional Information
Series: TrenchRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 130A (Tc) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 65A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 750W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Supplier Device Package | TO-247 (IXTH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 113 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9800 pF @ 25 V |
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