IXTH12N90
MOSFET N-CH 900V 12A TO247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS IXTH12N90 is a robust N-Channel MOSFET from the MegaMOS™ series, featuring a 900V drain-source breakdown voltage. This component is engineered for high-power applications with a continuous drain current of 12A at 25°C (Tc) and a maximum power dissipation of 300W (Tc). The device presents a low on-resistance of 900mOhm at 6A and 10V gate drive. Key electrical parameters include a gate charge (Qg) of 170 nC at 10V and input capacitance (Ciss) of 4500 pF at 25V. The IXTH12N90 utilizes a TO-247-3 package for through-hole mounting, suitable for demanding thermal management. It operates within an ambient temperature range of -55°C to 150°C (TJ) and supports a maximum gate-source voltage of ±20V. This MOSFET is commonly employed in power supply units, industrial motor control, and high-voltage switching applications.
Additional Information
Series: MegaMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 900mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-247 (IXTH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4500 pF @ 25 V |
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