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IXTH12N70X2

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IXTH12N70X2

MOSFET N-CH 700V 12A TO247

Manufacturer: IXYS

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The IXYS IXTH12N70X2 is an N-Channel Power MOSFET from the Ultra X2 series, featuring a 700V drain-source breakdown voltage and a continuous drain current capability of 12A at 25°C (Tc). This device offers a low on-resistance of 300mOhm maximum at 6A and 10V Vgs, with a maximum power dissipation of 180W (Tc). Key parameters include a gate charge of 19 nC (max) at 10V Vgs and an input capacitance (Ciss) of 960 pF (max) at 25V Vds. The MOSFET is housed in a TO-247-3 package with through-hole mounting. It is suitable for applications in power supplies, industrial automation, and motor control systems. The operating temperature range is -55°C to 150°C (TJ), with a maximum gate-source voltage of ±30V.

Additional Information

Series: Ultra X2RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Rds On (Max) @ Id, Vgs300mOhm @ 6A, 10V
FET Feature-
Power Dissipation (Max)180W (Tc)
Vgs(th) (Max) @ Id4.5V @ 250µA
Supplier Device PackageTO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)700 V
Gate Charge (Qg) (Max) @ Vgs19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds960 pF @ 25 V

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