IXTH12N70X2
MOSFET N-CH 700V 12A TO247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTH12N70X2 is an N-Channel Power MOSFET from the Ultra X2 series, featuring a 700V drain-source breakdown voltage and a continuous drain current capability of 12A at 25°C (Tc). This device offers a low on-resistance of 300mOhm maximum at 6A and 10V Vgs, with a maximum power dissipation of 180W (Tc). Key parameters include a gate charge of 19 nC (max) at 10V Vgs and an input capacitance (Ciss) of 960 pF (max) at 25V Vds. The MOSFET is housed in a TO-247-3 package with through-hole mounting. It is suitable for applications in power supplies, industrial automation, and motor control systems. The operating temperature range is -55°C to 150°C (TJ), with a maximum gate-source voltage of ±30V.
Additional Information
Series: Ultra X2RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 180W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-247 (IXTH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 700 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 960 pF @ 25 V |
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