IXTH12N120
MOSFET N-CH 1200V 12A TO247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTH12N120 is an N-Channel Power MOSFET designed for high-voltage applications. This component offers a continuous drain current of 12A (Tc) and a drain-to-source voltage of 1200V. With a maximum power dissipation of 500W (Tc) and a low on-resistance of 1.4Ohm at 6A and 10V gate drive, it is suitable for demanding power conversion tasks. The device features a gate charge of 95 nC at 10V and an input capacitance of 3400 pF at 25V. Packaged in a TO-247-3 through-hole configuration, the IXTH12N120 operates across a temperature range of -55°C to 150°C. Its robust specifications make it applicable in industries such as industrial power supplies, renewable energy systems, and electric motor drives.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BoxDownload Free CAD Model:
Technical Details:
| Packaging | Box |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-247 (IXTH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 95 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3400 pF @ 25 V |
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