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IXTH12N120

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IXTH12N120

MOSFET N-CH 1200V 12A TO247

Manufacturer: IXYS

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The IXYS IXTH12N120 is an N-Channel Power MOSFET designed for high-voltage applications. This component offers a continuous drain current of 12A (Tc) and a drain-to-source voltage of 1200V. With a maximum power dissipation of 500W (Tc) and a low on-resistance of 1.4Ohm at 6A and 10V gate drive, it is suitable for demanding power conversion tasks. The device features a gate charge of 95 nC at 10V and an input capacitance of 3400 pF at 25V. Packaged in a TO-247-3 through-hole configuration, the IXTH12N120 operates across a temperature range of -55°C to 150°C. Its robust specifications make it applicable in industries such as industrial power supplies, renewable energy systems, and electric motor drives.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Box
Technical Details:
PackagingBox
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Rds On (Max) @ Id, Vgs1.4Ohm @ 6A, 10V
FET Feature-
Power Dissipation (Max)500W (Tc)
Vgs(th) (Max) @ Id5V @ 250µA
Supplier Device PackageTO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)1200 V
Gate Charge (Qg) (Max) @ Vgs95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3400 pF @ 25 V

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