IXTH12N100
MOSFET N-CH 1000V 12A TO247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTH12N100 is an N-Channel Power MOSFET from the MegaMOS™ series, packaged in a TO-247-3 through-hole configuration. This component offers a high drain-source voltage (Vdss) of 1000V and a continuous drain current (Id) of 12A at 25°C (Tc), with a maximum power dissipation of 300W (Tc). Featuring an Rds On of 1.05 Ohm maximum at 6A and 10V, and a gate charge (Qg) of 170 nC maximum at 10V, this MOSFET is suitable for high-voltage applications. The operating temperature range is -55°C to 150°C. This device finds application in power supplies, industrial motor control, and renewable energy systems.
Additional Information
Series: MegaMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.05Ohm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-247 (IXTH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4000 pF @ 25 V |