IXTH10P50
MOSFET P-CH 500V 10A TO247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS IXTH10P50 is a P-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-to-Source Voltage (Vdss) of 500V and a continuous Drain Current (Id) of 10A at 25°C (Tc). With a maximum power dissipation of 300W (Tc), it is suitable for demanding power handling requirements. The IXTH10P50 has a low on-resistance (Rds On) of 900mOhm at 5A and 10V, and a gate-source threshold voltage (Vgs(th)) of 5V at 250µA. Key parameters include a gate charge (Qg) of 160 nC @ 10V and input capacitance (Ciss) of 4700 pF @ 25V. The device is housed in a TO-247-3 package and supports through-hole mounting. Operating temperature range is from -55°C to 150°C (TJ). This MOSFET is commonly utilized in power switching, motor control, and power supply applications across various industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 900mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-247 (IXTH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 160 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4700 pF @ 25 V |
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