IXTH102N20T
MOSFET N-CH 200V 102A TO247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTH102N20T is a high-performance N-Channel MOSFET designed for demanding power applications. This Trench technology device features a Drain-to-Source Voltage (Vdss) of 200V and a continuous Drain Current (Id) of 102A at 25°C, with a maximum power dissipation of 750W (Tc). Its low on-resistance (Rds On) of 23mOhm at 500mA and 10V drive voltage, combined with a gate charge (Qg) of 114nC (max) at 10V, ensures efficient switching. The device is housed in a TO-247-3 package, suitable for through-hole mounting. Operating temperature ranges from -55°C to 175°C (TJ). This component is widely utilized in power supply units, motor control, and industrial automation.
Additional Information
Series: TrenchRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 102A (Tc) |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 750W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Supplier Device Package | TO-247 (IXTH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 114 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6800 pF @ 25 V |