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IXTH06N220P3HV

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IXTH06N220P3HV

MOSFET N-CH 2200V 600MA TO247HV

Manufacturer: IXYS

Categories: Single FETs, MOSFETs

Quality Control: Learn More

IXYS Polar P3™ N-Channel Power MOSFET IXTH06N220P3HV offers a 2200V drain-source breakdown voltage with continuous drain current capability of 600mA at 25°C. This through-hole component, housed in a TO-247HV package, features a maximum on-resistance of 80 Ohms at 300mA and 10V Vgs. With a gate charge of 10.4 nC and input capacitance of 290 pF, it is suitable for high-voltage applications. The device operates across a temperature range of -55°C to 150°C and supports a maximum gate-source voltage of ±20V. This MOSFET finds application in high-voltage power conversion and switching systems, including industrial power supplies and energy generation equipment.

Additional Information

Series: Polar P3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3 Variant
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C600mA (Tc)
Rds On (Max) @ Id, Vgs80Ohm @ 300mA, 10V
FET Feature-
Power Dissipation (Max)104W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-247HV
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)2200 V
Gate Charge (Qg) (Max) @ Vgs10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds290 pF @ 25 V

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